Defect states in the high-dielectric-constant gate oxide LaAlO3.

摘要: We present calculations of the energy levels oxygen vacancy, AlLa antisite, and interstitial defects in LaAlO3 using density functional methods that do not need an empirical band gap correction. The are aligned to those Si channel known offsets. vacancy gives level near conduction above gap. It is identified as main electron trap cause instability. antisite a state midgap, neutral when empty, which would be important trap, with no counterpart HfO2.