Dual-mode high-sensitivity humidity sensor based on MoS2/Si nanowires array heterojunction
作者： Zhenhua Lou , Di Wu , Kun Bu , Tingting Xu , Zhifeng Shi
DOI: 10.1016/J.JALLCOM.2017.07.338
关键词:
摘要: Abstract The large-area few-layer MoS2 film were synthesized via a thermally decomposition method. MoS2/Si nanowires array (SiNWA) heterojunctions constructed and investigated, which exhibited highly humidity-dependent electrical properties in both forward reverse voltages. Further analysis reveals that such MoS2/SiNWA heterojunction devices are sensitive to varying relative humidity (RH) values ranging from 11% 95% with excellent stability, reproducibility fast response speeds. sensitivities response/recovery speeds obtained be 392% 26.4/15.1 s at RH under voltage bias of +5 V, 2967% 22.2/11.5 s at of −5 V, respectively. Such high-performances of dual-mode sensor superior the previous reported results, revealing they will have great potential applications sensors.
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