作者: M. Drechsler , B. K. Meyer , D. M. Hofmann , P. Ruppert , D. Hommel
DOI: 10.1063/1.119744
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摘要: The conduction band electron properties in ZnSe epitaxial layers on GaAs grown by molecular beam epitaxy are determined far-infrared optically detected cyclotron resonance experiments. high ωτ-value (in excess of 800) allows the observation spin splitting resonance. is 8 mT agreement with theoretical predictions.