InGaN/GaN Light-Emitting Diode on Concave-Hexagonal-Patterned Sapphire Substrate
作者： Nam Han , Hyung Gu Kim , Hee Yun Kim , Hyun Kyu Kim , Ji Hye Kang
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摘要: We describe an effective method for obtaining GaN-based light-emitting diodes (LEDs) with a high light output power using concave-hexagonal-patterned sapphire substrates (CH-PSSs) without c-plane region that have been wet etched H2SO4:H3PO4 mixture solution. Adopting the CH-PSSs in LEDs could improve internal quantum efficiency by reducing etch pit density and also increase extraction because manner which inclined facets focus diffract at concave-hexagonal pattern. At injection current of 20 mA, CH-PSS LED was 2.5 times higher than conventional LEDs.
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