Process for creating fully-recessed field isolation regions by oxidizing a selectively-grown epitaxial silicon layer

摘要: A low-stress process for creating field isolation regions on a silicon substrate that are fully recessed with respect to active areas. The regions, which have no bird's beak transition at their edges, created by oxidizing an epitaxially-grown layer of silicon, the edges isolated from area oxide-backed nitride spacer. Each spacer is contiguous horizontal segment protects oxidation during thermal oxidation. modification process, requires deposition additional dioxide and wet etch remove spacers layer, further reduces stress providing void around periphery epitaxial expansion thereof.