Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm 2 peak current density to enhance TFET drive current
作者： D Pawlik , B Romanczyk , P Thomas , S Rommel , M Edirisooriya
DOI: 10.1109/IEDM.2012.6479118
关键词:
摘要: Recently, III-V tunneling field effect transistors (TFET) for low voltage logic applications ( 0.53 Ga 0.47 As, (iii) InAs, (iv) InAs 0.9 Sb 0.1 /Al 0.4 0.6 Sb, and (v) InAs/GaSb as a function of doping effective tunnel barrier height. These results confirm that heterojunctions (bandgap engineering) will enhance peak (J P ) Zener current densities beyond homojunction TDs [3], to record 2.2MA/cm2 11 MA/cm2 (@ −0.3 V), laying the fundamental groundwork TFET at 7 nm technology node.
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