Infrared Absorption of Oxygen in Silicon

摘要: Three infrared absorption bands have been correlated with the oxygen concentration of silicon. Spectra taken between 4.2\ifmmode^\circ\else\textdegree\fi{}K and 297\ifmmode^\circ\else\textdegree\fi{}K show an unusual temperature-dependent fine structure in most intense band at 1106 ${\mathrm{cm}}^{\ensuremath{-}1}$. Isotopic shifts two observed low temperatures samples enriched ${\mathrm{O}}^{18}$. These results can be explained by a model which interstitial is bonded to adjacent silicon atoms nonlinear Si-O-Si unit. Observations on different history indicate direct but complicated dependence some growth-dependent variables concentration.