Parabolic magnetoresistance from the interaction effect in a two-dimensional electron gas
作者： M. A. Paalanen , D. C. Tsui , J. C. M. Hwang
DOI: 10.1103/PHYSREVLETT.51.2226
关键词:
摘要: A negative magnetoresistance proportional to ${B}^{2}$ is found in the two-dimensional electron gas of GaAs-${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ heterostructures. It explained by conductivity correction due interaction effect disordered systems. The high-field lifetime, estimated both from and Shubnikov-de Haas oscillations, much shorter than zero-field demonstrating predominance long-range potential fluctuations high-mobility samples.
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