STM-Induced Modification and Electrical Properties of Surfaces on the Atomic and Nanometer Scales

摘要: We first discuss the atomic and nanometer scale modification of strongly-bonded materials. Our approach involves short-range tip-sample chemical interactions effects electrostatic field produced by a voltage pulse. This process is demonstrated controlled removal redeposition individual atoms or clusters Si from Si(111). then show that due to elastic coupling surface atoms, there material-dependent limit on how local an STM-induced can be. use reconstruction Au(111) as example. The electrical properties nanometer-size contacts metal silicon surfaces nanostructures are also explored via point-contacts. (tip)-semiconductor models Schottky-diodes at extreme level miniaturization. Analysis resulting I-V curves reveals important differences between nano-diodes corresponding macroscopic devices. Nevertheless, 10 nm diameter diodes functional electronic Contacts importance carrier scattering boundaries (steps). demonstrate steps interference incident reflected waves be directly imaged in (dI/dV)/(I/V) maps.