Barrier-less plug structure

摘要: Methods are provided for the construction of metal-to-metal connections between non-adjacent layers in a structure, such as semiconductor device. A first metal conductor layer is along substrate. An anti-reflection cap overlying relation with said layer. At least portion dielectric and removed to define passage which extends from an upper surface conductor. The substantially filled fill metal, second applied over at electrically connect conductors. diffusion liner can optionally be prior application metal. integrally formed, one formed same matrix