SOI power device

摘要: The equipotential lines within a thin film power device (eg LIGBT, LDMOS) are more evenly distributed by providing thick buried oxide layer ( / 3-10 microns) beneath the drift region. thermal performance is improved inverting device, mounting it contact side down on second semiconductor substrate and removing original substrate. Heat conducted from through metallization Contacts to any control/sensing circuits may be made above below device.