Solid state image sensor with overflow protection and high resolution
作者： Tetsuo Yamada
DOI:
关键词:
摘要: A plurality of photoelectric conversion elements are arranged on a semiconductor substrate and reverse bias voltage is supplied between the substrate. The excess signal carriers generated at flow into which serves as drain region to prevent blooming phenomenon.
lens.org 参考文章(4)
James M Early, Charge-coupled device with overflow protection ,(1973)
Kosonocky W, Williams B, Charge-coupled radiation sensing circuit with charge skim-off and reset ,(1973)
Gilbert F Amelio, Rudolph H Dyck, Charge coupled area imaging device with column anti-blooming control ,(1973)
Gilbert F Amelio, Charge coupled device with exposure and antiblooming control ,(1973)