1710-V 2.77-m/spl Omega/cm sub 2 4H-SiC trenched and implanted vertical junction field-effect transistors
作者： J.H. Zhao , K. Tone , P. Alexandrov , L. Fursin , M. Weiner
关键词:
摘要: This letter reports the demonstration of a 4H-SiC trenched and implanted vertical-junction field-effect transistor (TI-VJFET). The p/sup +/n junction gates are created on sidewalls deep trenches by angled Al implantation, which eliminates need for epitaxial regrowth during JFET fabrication. Blocking voltages up to 1710 V has been achieved with voltage supporting drift layer only 9.5 /spl mu/m using two-step termination extension. TI-VJFET shows low specific on-resistance R/sub ON-sp/ 2.77m/spl Omega/cm/sup 2/, corresponding record high value V/sub B//R/sub equal 1056 MW/cm/sup 2/.
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