Microscopic model for studying radiation degradation of electron transport and photodetection devices

摘要: A microscopic-level model is proposed for exploring degraded performance in electron transport and photodetection devices, based on pre-calculated results as initial conditions meso-scale approaches, including ultra-fast displacement cascade, intermediate defect stabilization cluster formation, slow reaction migration. The steady-state spatial distribution of point defects a mesoscopic-scale layered system will be studied by taking into account the planar dislocation loops spherical neutral voids well. These theoretical efforts are expected to crucial fully understanding physical mechanism identifying species, degradations, development mitigation strategies. Additionally, verification current device characterization discussed.