Cross-Sectional Scanning Tunneling Microscopy Applied to Complex Oxide Interfaces

摘要: Understanding interfacial science is critical to many modern technologies. It very common in solid-state physics for electronic properties show novel phenomena when combining various dissimilar materials at atomically abrupt interfaces. For example, semiconductor interfaces have provided the foundation of devices several decades. Now with advances growth and synthesis, controllable high quality complex oxide heterojunctions can be routinely fabricated. Since exhibit a wide variety functionalities owing their strong coupling electron, lattice, orbital spin degrees freedom, these display spectrum interesting functionalities. Combining oxides allows one explore create intriguing that are not attainable lone bulk constituents. However, key challenge has been direct characterization nanoscale order understand physical found This requires development new experimental approaches. In this paper, we review utilization cross-sectional scanning tunneling microscopy/spectroscopy as probe nanoscale. technique provides valuable insight both structural unique systems enables understanding detailed structure (e.g., local density states (LDOS), charge transfer, band bending, etc.) interfaces, which interest fundamental applied science.