Theory of Atomic Recombination on Surfaces

作者: A. Gelb , Shoon K. Kim

DOI: 10.1063/1.1675602

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摘要: A simple kinetic theory for atomic recombination on solid surfaces employing the Rideal mechanism is presented. The temperature dependence of reaction rate discussed in terms ``transition temperature'' which characterizes change order with respect to gas‐phase atom concentration. transition temperatures are shown correspond maxima and minima rate. experimental data Wood Wise others hydrogen glass satisfactorily reproduced assumption two types adsorption sites having binding energies 42 2.1 kcal/mole, respectively. Qualitative agreement also found limited metals. comparison present steady state De Boer Van Steenis given Appendix a refined definition partition function activated complex surface.

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