Thermal characteristics of GaAs laser junctions under high power pulsed conditions
作者： W. Engeler , M. Garfinkel
DOI: 10.1016/0038-1101(65)90085-7
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摘要: Abstract The temperature rise at the junction of a GaAs laser has been calculated for variety pulse currents and base temperatures. problem is first solved analytically by an approximation assuming constant thermal parameters, then machine calculation taking into account variation conductivity heat capacity. These solutions are compared discussed in terms practical design parameters. effects bulk resistivity contact resistance included.
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