Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells
作者： Sabine Kolodinski , Jürgen H. Werner , Thomas Wittchen , Hans J. Queisser
DOI: 10.1063/1.110489
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摘要: … 3(a) reveals again a smaller impact-ionization probability. The maximum D in curves 6 and y of Fig. 2 occurs at 4.6 eV; here the absorption is the highest for silicon,‘4 because strong …
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