A CMOS, fully integrated sensor for electronic detection of DNA hybridization

作者: M. Barbaro , A. Bonfiglio , L. Raffo , A. Alessandrini , P. Facci

DOI: 10.1109/LED.2006.876303

关键词:

摘要: An integrated field-effect device for fully electronic deoxyribonucleic acid (DNA) detection was realized in a standard CMOS process. The is composed of floating-gate MOS transistor, control-capacitor acting as counterelectrode, and an exposed active area DNA immobilization. drain-current the transistor modulated by electric charge carried molecules. After hybridization, this increases change output current measured. Experimental results are provided. Full compatibility with process opens way to realization low-cost large-scale integration fast detectors.

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