Metal atom migration switching device, drive and manufacturing methods for the same, integrated circuit device and memory device using same

作者: Hisao Kawaura , Hiroshi Sunamura

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摘要: Provided is a switching device including ion conducting part 4 having an conductor, first electrode 1 formed at gap away from , second 2 to be in contact with and third 3 . Second supplies metal ions the or receives conductor precipitate corresponding ions.

参考文章(7)
T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama, M. Aono, Nanometer-scale switches using copper sulfide Applied Physics Letters. ,vol. 82, pp. 3032- 3034 ,(2003) , 10.1063/1.1572964
Hisao Kawaura, Tomonobu Nakayama, Hiroshi Sunamura, Tsuyoshi Hasegawa, Naohiko Sugibayashi, Masakazu Aono, Toshitsugu Sakamoto, Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device ,(2003)
Hisao Kawaura, Tsuyoshi Hasegawa, Naohiko Sugibayashi, Masakazu Aono, Kazuya Terabe, Toshitsugu Sakamoto, Tomonobu Nakayama, Electric device comprising solid electrolyte ,(2002)
Nakayama Tomonobu, Aono Masakazu, Hasegawa Takeshi, Terabe Kazuya, ELECTRONIC DEVICE CAPABLE OF CONTROLLING CONDUCTANCE ,(2002)