作者: George A. Hart , Stuart K. Searles
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摘要: A Xenon Bromide (XeBr) excimer laser is made by electron beam excitation over a range of from 10-3000 torr xenon with 0.5-4% Br 2 . Xe* generated high-energy reacts to produce XeBr* which undergoes bound-free transition resulting in stimulated emission on the XeBr*→Xe + hv (230-360 nm) where* represents low lying electronically excited state.