Nanofabrication with a scanning tunneling microscope
作者： S.‐T. Yau , D. Saltz , A. Wriekat , M. H. Nayfeh
DOI: 10.1063/1.348609
关键词:
摘要: Nanometer‐scale structures as small 1 nm were fabricated on graphite surfaces using a scanning tunneling microscope in the presence of low‐pressure (10−4 Torr) trimethylaluminum. The studies performed under controlled conditions gas purity and pressure, allowing systematic measurements. We studied voltage threshold other features fabrication process function tip‐surface biasing current. lead us to believe that formed by bombardment surface ions produced electron‐assisted field ionization localized region gap.
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