Assembling your nanowire: an overview of composition tuning in ternary III-V nanowires.
作者： Masoomeh Ghasemi , Egor D Leshchenko , Jonas Johansson
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摘要: The ability to grow defect-free nanowires in lattice-mismatched material systems and design their properties has made them ideal candidates for applications fields as diverse nanophotonics, nanoelectronics medicine. After studying nanostructures consisting of elemental binary compound semiconductors, scientists turned attention more complex systems-ternary nanowires. Composition control is key these since it enables bandgap engineering. use different combinations compounds growth methods resulted numerous investigations. aim this review present a survey the studied date, give brief overview issues tackled progress achieved nanowire composition tuning. We focus on ternary III x III1-x V (AlGaAs, AlGaP, AlInP, InGaAs, GaInP InGaSb) IIIV V1-x (InAsP, InAsSb, InPSb, GaAsP, GaAsSb GaSbP).
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