Resonant tunneling hot carrier transistor
作者： Yuji Ando
DOI:
关键词:
摘要: A resonant tunneling hot carrier transistor according to the present invention is provided with a first multiple-layer structure on substrate and having collector layer, barrier base layer quantum well resonator, common emitter second layer. The resonators respectively provide sub-bands different in energy level, so that injections take place from into layers at emitter-base voltage levels, respectively.
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