Investigation of crystal growth of 50 mm CZT using SiC pedestal and pBN crucible

摘要: Abstract Improving the structural, optical, and electronic properties of bulk CZT remains a topic great interest for producing high quality nuclear imaging material. The work presented here is result several experiments whose geometries materials have been chosen due to their thermal properties. Results are 50 mm ingots grown using furnace elements which shown be conducive convex solid–liquid interface shape. A novel crystal growth pedestal was used in this in-situ measurements temperature gradients. electrical optical as material presented. As result, large grains volumes obtained ingots. benefit geometry has demonstrated by comparing with without SiC pedestal. Gamma spectra planar devices harvested from First Freeze regions most influenced effects