Vapour transport deposition of fluorographene oxide films and electro-optical device applications

摘要: Abstract Fluorographene is one of the most interesting 2D materials owing to its span electronic properties, from a conductor wide-gap insulator, controlled by compositional carbon fluorine ratio. Unlike chemically inert graphene, fluorographene recognized for rich chemistry, particularly at ambient, allowing tailoring physical properties. Here, we report on single step, catalyst free, wafer-scale synthesis oxide (FGO) ultra-thin films (∼4 nm thickness) vapour deposition. The FGO, possessing 7% content, comprises few-nanometer domains sp2-sp3 with high thermal stability, as confirmed several analytical methods. We show that FGO can be utilized an active hetero-layer few-layer MoS2 field effect transistor (FET), significantly improving performance optoelectronic devices extended spectral response towards near infrared and responsivity up 6 A/W. FGO-MoS2 band alignment, derived measured work function (4.69 eV), indicates plausible photoconductive gain mechanism fast transit time holes mediated quasi-continuous defect states.