Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers
作者： P. Ressel , G. Erbert , U. Zeimer , K. Hausler , G. Beister
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摘要: … For passivating the cleaned facets, we have selected ZnSe. It can be deposited epitaxially on GaAs or related compounds, thus yielding a favorably low interface-state density at least …
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