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作者: X. B. Zhang , K. L. Ha , S. K. Hark
DOI: 10.1063/1.1394949
关键词:
摘要: … Our results showed that when growing CdSe/ZnSe QDs by MOCVD, passivation of the interface must be carefully considered. The growth of CdSe QDs on ZnSe has been found to …
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