Front-end electronics of double SOI X-ray imaging sensors

摘要: We have developed monolithic CMOS pixel sensor using fully-depleted (FD) silicon-on-insulator (SOI) process technology. The SOI substrates consist of high-resistivity silicon with p-n junctions and low-resistivity layers for forming SOI-CMOS circuitry. Tungsten vias are used to make connections between in the substrate first metal top-layer Using this construction, high gain small areas can be achieved. In 2014, a high-resolution, integrated sensor, called INTPIX8, was two types substrates: float-zone, p-type layer on single (SSOI) wafer Czochralski, double (DSOI) wafer. X-ray spectra were obtained Am-241 radiation source. SSOI-based DSOI-based sensors exhibited different levels there no large differences noise them.