Bi-stable resistive switching in an array of $$\hbox {Cu/Cu}_x\hbox {O/Au}$$ Cu/Cu x O/Au nanowires

摘要: A resistive switching system comprising of metal–insulator–metal \((\hbox {Cu/Cu}_x\hbox {O/Au})\) sandwich-structured nanowires embedded within polycarbonate membrane has been investigated. The switches from non-Ohmic high state (HRS) to Ohmic low on application a critical bias \(\sim \)2.5 V. bipolar can be performed by applying current as well. Driving two suitable currents, \(I_{\mathrm{set}}= 50\,\upmu \hbox {A}\) and \(I_{\mathrm{reset}}= -0.5\,\hbox {mA},\) we observe highly reproducible between stable states. is initiated establishment filamentary conduction path commonly formed in oxide materials. However, the main charge transport HRS governed with modified activated behavior, which obvious antisymmetric, reversible I–V characteristic following \(I=aV\exp [(-E_A+b|V|)/k_BT]\) where a, b \(E_A\) are constants. exponential term corresponds generation field-enhanced thermal activation process, whereas linear related mobility.