Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
作者： D. Spirkoska , J. Arbiol , A. Gustafsson , S. Conesa-Boj , F. Glas
DOI: 10.1103/PHYSREVB.80.245325
关键词:
摘要: The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety …
arxiv.org
harvard.edu
128.84.21.199参考文章(47)
S. M. Sze, Semiconductor Devices: Physics and Technology ,(1985)
Nahid Ghaderi, Maria Peressi, Nadia Binggeli, B. G. Sidharth, F. Honsell, O. Mansutti, K. Sreenivasan, A. De Angelis, First-Principles Investigations of Intrinsic and Si-doped GaAs Nanowires: Structural Stability and Electronic Properties FRONTIERS OF FUNDAMENTAL AND COMPUTATIONAL PHYSICS: 9th International#N#Symposium. ,vol. 1018, pp. 193- 196 ,(2008) , 10.1063/1.2947681
Lisa S Karlsson, Kimberly A Dick, Jakob B Wagner, Jan-Olle Malm, Knut Deppert, Lars Samuelson, L Reine Wallenberg, Understanding the 3D structure of \mathrm {GaAs\langle 111\rangle B} nanowires Nanotechnology. ,vol. 18, pp. 485717- ,(2007) , 10.1088/0957-4484/18/48/485717
V. G. Dubrovskii, N. V. Sibirev, Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires Physical Review B. ,vol. 77, pp. 035414- ,(2008) , 10.1103/PHYSREVB.77.035414
Fauzia Jabeen, Vincenzo Grillo, Silvia Rubini, Faustino Martelli, Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy Nanotechnology. ,vol. 19, pp. 275711- 275711 ,(2008) , 10.1088/0957-4484/19/27/275711
A. Mooradian, G.B. Wright, First order Raman effect in III–V compounds Solid State Communications. ,vol. 4, pp. 431- 434 ,(1966) , 10.1016/0038-1098(66)90321-8
Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui, Crystallographic Structure of InAs Nanowires Studied by Transmission Electron Microscopy Japanese Journal of Applied Physics. ,vol. 46, ,(2007) , 10.1143/JJAP.46.L1102
M. Murayama, T. Nakayama, Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces. Physical Review B. ,vol. 49, pp. 4710- 4724 ,(1994) , 10.1103/PHYSREVB.49.4710
Toru Akiyama, Kosuke Sano, Kohji Nakamura, Tomonori Ito, An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires Japanese Journal of Applied Physics. ,vol. 45, pp. L275- L278 ,(2006) , 10.1143/JJAP.45.L275
J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, A. Y. Cho, Quantum Cascade Laser Science. ,vol. 264, pp. 553- 556 ,(1994) , 10.1126/SCIENCE.264.5158.553