Improvement of Cu2ZnSnS4 thin film properties by a modified sulfurization process
作者： Dongwan Seo , Jihoon Na , Changheon Kim , Chaehwan Jeong , Sangwoo Lim
DOI: 10.1016/J.TSF.2015.05.060
关键词:
摘要: Abstract In the solution-based preparation of CZTS (Cu 2 ZnSnS 4 ) thin films followed by a sulfurization process, layer MoS is formed at CZTS–Mo interface. Formation this mainly governed process in H S ambient gas rather than diffusion sulfur source film. Growth grain and boundaries facilitates formation any process. A decrease series resistance an increase current density solar cell efficiency were achieved through temperature second sequence two-step sequence. The dominates performance film cells with relatively layer, but degraded recombination rate hole barrier effect between Mo when sufficiently thick.
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