Phase qubits fabricated with trilayer junctions
作者： Matteo Mariantoni , J. Wenner , M. Weides , R. C. Bialczak , D. Sank
DOI: 10.1088/0953-2048/24/5/055005
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摘要: We have developed a novel Josephson junction geometry with minimal volume of lossy isolation dielectric, being suitable for higher quality trilayer junctions implemented in qubits. The are based on in-situ deposited trilayers thermal tunnel oxide, micron-sized areas and low subgap current. In qubit spectroscopy only few avoided level crossings observed, the measured relaxation time $T_1\approx400\;\rm{nsec}$ is good agreement usual phase decay time, indicating loss due to additional dielectric.
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