Formation of β-C3N4 grains by nitrogen-ion-beam-assisted deposition
作者： X.W. Su , H.W. Song , F.Z. Cui , W.Z. Li , H.D. Li
DOI: 10.1016/S0257-8972(95)02809-9
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摘要: Abstract Carbon nitride thin films were prepared by nitrogen-ion-beam-assisted deposition. Auger electron spectroscopy shows that the N/C atomic composition ratio increases with increasing current density and decreasing bombarding energy of nitrogen ion beam. At a 200 eV 0.2 mA cm −2 , maximum 0.54 is obtained crystalline β -C 3 N 4 grains dimensions about 0.1 μm are observed transmission microscopy. This film displays high Knoop hardness 4450 kgf mm resistivity 10 9 Ω cm.
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