Is there an intimate relation between amorphous and crystalline semiconductors
作者： G.A.N. Connell , William Paul
DOI: 10.1016/0022-3093(72)90139-1
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摘要: Abstract Pressure measurements have often been used to clarify the band structure and fundamental properties of crystalline semiconductors. An account is given such on optical absorption edge refractive index amorphous Ge. Less complete data Si, GaP GaAs are also reported. The implication results for present models transport examined. Finally, value Penn gap in phase estimated from calculated heat crystallization.
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