The effect of Xe ion irradiation (40, 80 MeV) on HTS-2G GdBa2Cu3O7−x
作者： A.V. Troitskii , L.Kh. Antonova , T.E. Demikhov , V.A. Skuratov , V.K. Semina
DOI: 10.1016/J.PHYSC.2020.1353631
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摘要: Abstract The samples of the HTS-2G GdBCO(123) tape were uniformly irradiated at room temperature by 132Xe 27 + ions with energies 80 and 40 MeV. critical current T = 77 K, temperature, superconducting transition width have been studied, depending on irradiation fluencies. observed dependences indicate an improvement in current-carrying capacity composite under low-dose ( 1 × 10 9 − 5 ion/cm2). results are compared previously obtained data same 167 MeV xenon ions. It is shown that threshold for formation radiation damage due to ionization this material range 40 MeV – 80 MeV. Possible mechanisms effect discussed.
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