A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy.
作者： J.H. Lee , E.J. Cha , Y.T. Kim , B.K. Chae , J.J. Kim
DOI: 10.1016/J.MICRON.2015.07.015
关键词:
摘要: Threshold switching is a phenomenon where the resistivity of an insulating material changes and insulator exhibits metallic behavior. This could be explained by phase transformation in oxide materials; however, this behavior also seen amorphous insulators. In study, through ex-situ experiment using transmission electron microscopy (TEM), we proved that threshold NbO2 accompanies local crystallization. The change I-V characteristics after electroforming was examined evaluating concentration profile. Atom probe tomography (APT) combined with in-situ TEM probing technique performed to understand NbO2. crystallization validated observed difference time-of-flight (ToF) between crystalline We concluded slower ToF (a-NbO2) compared (c-NbO2) due trap-assisted recombination.
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