High Resolution Nonlinear Laser Spectroscopy Measurements of Exciton Dynamics in GaAs Quantum Well Structures

摘要: The optical properties of GaAs/AlxGa1-xAs multiple quantum well structures are dominated by strong sharp excitonic resonances near the band edge which observable in both absorption and luminescence spectra1,2. quasi 2-dimensional excitons confined GaAs layer AlxGa1-xAs barriers. principal exciton include a binding energy increases with decreasing width blue shift transition energy. Indeed increase due to confinement explains clear observation these even at room temperature. These materials grown molecular beam epitaxy (MBE) methods important for application high speed electronic opto-electronic devices3. Moreover, ability fabricate crystals dimensions controllable atomic level provides an excellent opportunity study basic physics giving rise relaxation reduced dimensionality through interaction crystal lattice.