Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM)
作者： C.S. Dash , S.R.S. Prabaharan
DOI: 10.2174/2210681208666180621095241
关键词:
摘要: Ion transport in the solid state has been regarded as imperative with regards to high energy density electrochemical storage devices (for instance, batteries) for efficient electric mobility. Of late, there is another niche application involving ion transport in solid state which manifested itself as nonvolatile memory namely memristor. Such memories are classified under the emerging category of novel solid state Resistive Random Access Memories (RRAM). In 2008, HP labs unveiled the first practical memristor device employing TiO2 and …
eurekaselect.com参考文章(135)
Matthew D. Pickett, Gilberto Medeiros-Ribeiro, R. Stanley Williams, A scalable neuristor built with Mott memristors Nature Materials. ,vol. 12, pp. 114- 117 ,(2013) , 10.1038/NMAT3510
Daniele Ielmini, Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth IEEE Transactions on Electron Devices. ,vol. 58, pp. 4309- 4317 ,(2011) , 10.1109/TED.2011.2167513
Sarmistha Talukdar, Mahitosh Mandal, Dietmar W. Hutmacher, Pamela J. Russell, Carolina Soekmadji, Subhas C. Kundu, Engineered silk fibroin protein 3D matrices for in vitro tumor model Biomaterials. ,vol. 32, pp. 2149- 2159 ,(2011) , 10.1016/J.BIOMATERIALS.2010.11.052
Dmitri B. Strukov, R. Stanley Williams, Exponential ionic drift: fast switching and low volatility of thin-film memristors Applied Physics A. ,vol. 94, pp. 515- 519 ,(2009) , 10.1007/S00339-008-4975-3
John Paul Strachan, J Joshua Yang, L A Montoro, C A Ospina, A J Ramirez, A L D Kilcoyne, Gilberto Medeiros-Ribeiro, R Stanley Williams, Characterization of electroforming-free titanium dioxide memristors. Beilstein Journal of Nanotechnology. ,vol. 4, pp. 467- 473 ,(2013) , 10.3762/BJNANO.4.55
JIWEN XU, ZUPEI YANG, YUPEI ZHANG, XIAOWEN ZHANG, HUA WANG, Bipolar resistive switching behaviours in ZnMn 2 O 4 film deposited on p + -Si substrate by chemical solution deposition Bulletin of Materials Science. ,vol. 37, pp. 1657- 1661 ,(2014) , 10.1007/S12034-014-0731-9
Lei Zhang, Haiyang Xu, Zhongqiang Wang, Hao Yu, Jiangang Ma, Yichun Liu, Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO 2 /Pt memory device Applied Surface Science. ,vol. 360, pp. 338- 341 ,(2016) , 10.1016/J.APSUSC.2015.11.022
J Joshua Yang, Feng Miao, Matthew D Pickett, Douglas A A Ohlberg, Duncan R Stewart, Chun Ning Lau, R Stanley Williams, The mechanism of electroforming of metal oxide memristive switches Nanotechnology. ,vol. 20, pp. 215201- 215201 ,(2009) , 10.1088/0957-4484/20/21/215201
Anas Mazady, Mehdi Anwar, Memristor: Part I—The Underlying Physics and Conduction Mechanism IEEE Transactions on Electron Devices. ,vol. 61, pp. 1054- 1061 ,(2014) , 10.1109/TED.2014.2304436
E.M. Izhikevich, Which model to use for cortical spiking neurons IEEE Transactions on Neural Networks. ,vol. 15, pp. 1063- 1070 ,(2004) , 10.1109/TNN.2004.832719