Method for determining structural defects in semiconductor wafers by ultrasonic microscopy

摘要: A method and apparatus for determining the location size of structural defects in a body solid material, particularly regions thermoplastic deformation semiconductor wafers. An acoustical focused beam generated by an ultrasonic transducer, having pulsed frequency at least 75 MHZ, is transmitted through to provide attenuated signal pattern which manifests defects, such as slip planes can result wafer warp, well cracks, bubbles, foreign particles or segregation zones internal interfaces.