The crystallization of amorphous Dy-Cu thin films
作者： L. Shikhmanter , M. Talianker , M.P. Dariel
DOI: 10.1016/0040-6090(82)90070-0
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摘要: Abstract The crystallization of vacuum-deposited amorphous Dy-35at.%Cu thin films was studied by transmission electron microscopy and diffraction. micrographs allowed us to follow the nucleation subsequent growth DyCu crystals within matrix. process is characterized its sharp onset at 150 °C. temperature dependence rate agrees with simple models. increases linearly temperature. characteristic exponent n in Avrami's equation corresponds a two-dimensional interface-controlled growth. results determine free energy critical nucleas formation (0.18 eV) also associated atomic migration (1 eV).
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