作者: P.M. Rice , S.J. Zinkle
DOI: 10.1016/S0022-3115(98)00208-6
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摘要: Abstract Transmission electron microscopy (TEM) was performed on a V–4Cr–4Ti alloy irradiated to damage levels of 0.1–0.5 displacements per atom (dpa) at 110–505°C. A high density small faulted dislocation loops were observed irradiation temperatures below 275°C. These became unfaulted above ∼275°C, and Ti-rich defect clusters lying {0 0 1} planes appeared along with the 300°C. Based TEM tensile measurements, barrier strengths are ∼0.4–0.5 0.25, respectively. This indicates that both types defects can be easily sheared by dislocations during deformation. Cleared channels following deformation in specimen 268°C.