Nanoscale studies of domain wall motion in epitaxial ferroelectric thin films

摘要: Atomic force microscopy was used to investigate ferroelectric switching and nanoscale domain dynamics in epitaxial Pb(Zr0.2Ti0.8)O3 thin films. Measurements of the writing time dependence size reveal a two-step process which nucleation is followed by radial growth. During this growth, wall velocity exhibits v∝exp−(1∕E)μ on electric field, characteristic creep process. The motion analyzed both context stochastic periodic potential as well canonical an elastic manifold disorder potential. dimensionality films suggests that at origin observed creep. To effects changing films, defects were introduced during crystal growth (a-axis inclusions) or heavy ion irradiation, producing with planar columnar defects, respectively. presence these found significantly decrease cree...