In situ auger analysis of surface composition during high fluence ion implantation

摘要: Abstract A multi-technique ultrahigh vacuum (UHV) target chamber has been used to perform in situ Auger electron spectroscopic (AES) analysis during ion implantation and AES sputter depth profiling of the substrate within 1–2 min after implantation. Iron was implanted with 150 keV Ti + at a 45° angle incidence pressures ranging from 8 × 10 −9 Torr residual gases up 1 −5 intentionally admitted CO gas. fluence ∼1.0 16cm −2 needed away C-covered air-formed oxide. The reached surface at.% level by ∼1.5 −2. With increasing fluence, concentration increased ∼15 steady-state curve shape that concave downward all fluences. C found be proportional for implants CO, supporting carburization model. Substantial O (15–20 at.%) detected these runs but profiles showed only carburization, not oxidation, layer. Even best available (8 −9Torr), some observed attributed gas absorption. An increase retained dose pressure yet independently confirmed. Ti/Fe ratio is higher done this discussed terms modification yield Ti.