General theory for pinched operation of the junction-gate FET
作者： A.B. Grebene , S.K. Ghandhi
DOI: 10.1016/0038-1101(69)90112-9
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摘要: Abstract A device oriented model is developed to describe the operation of junction-gate field-effect transistor (FET) beyond pinch-off. The derived on basis a generalized structure with an arbitrary channel doping profile. It provides qualitative and quantitative description current conduction mechanism, applicable over entire dynamic range operation. Current mechanisms in vicinity source drain are examined separately. shown that saturation carrier drift velocities at high electric fields results formation space-charge region finite length. An approximate solution two-dimensional Poisson's equation potential distribution within this region. significant result prediction resistance pinched operation, which shows strong dependence point.
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