Graphene/Si-nanowire heterostructure molecular sensors
作者： Jungkil Kim , Si Duk Oh , Ju Hwan Kim , Dong Hee Shin , Sung Kim
DOI: 10.1038/SREP05384
关键词:
摘要: Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale chemical vapour deposition and NWs are aligned metal-assisted etching of wafer. plays a key role preventing tips vertical from being bundled, thereby making stand on wafer separately each other under graphene, critical structural feature the uniform Schottky-type junction between graphene. The sensors respond very sensitively to gas molecules showing 37 1280% resistance changes within 3.5/0.15 12/0.15 s response/recovery times O2 H2 exposures air, respectively, highest performances ever reported. These results together sensor responses vacuum discussed based surface-transfer doping mechanism.
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