Ultrafast Dynamics of Electronic Capture and Intersubband Relaxation in GaAs Quantum Well
作者： D. Morris , B. Deveaud , A. Regreny , P. Auvray
DOI: 10.1007/978-94-011-1144-7_37
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摘要: The dynamics of carrier capture and intersubband relaxation in GaAs quantum well have been measured, using a time-resolved photoluminescence technique. At low densities (≤ 2×1010 cm -2), electron times are shown to oscillate as function width quantum-mechanical resonance is observed when one confined level 36 meV below the barrier edge. Holes fast (< 10 ps), depend weakly on structure. No significant changes for up 1×1011 cm-2. For widths < 150 A, (2→ 1) time (of typically 3 ps) measured. This increase by an order magnitude at longer (220 A). variation both with width, demonstrate importance LO phonon scattering processes.
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