Ion beam synthesis of CoSi2: Influence of surface kinetics on nucleation
作者： A.E. Volkov , M.-O. Ruault , H. Bernas , V.A. Borodin
DOI: 10.1016/S0168-583X(01)00514-6
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摘要: Abstract The experimentally observed kinetics of CoSi2 precipitate nucleation in Si during Co implantation are compared with the predictions an analytical model that includes coupling between absorption/desorption impurity atoms at surface and diffusion from bulk. comparison shows this system, deviates considerably thermodynamical form.
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