Electroluminescence studies of recombination in hydrogenated amorphous silicon p-i-n devices

摘要: Abstract We present experimental data on the voltage and temperature (80 K ) dependence of electroluminescence forward bias current in hydrogenated amorphous silicon (a-Si:H) p-i-n structures. Since electrons holes are injected from opposite sides sample, we able to probe non-geminate radiative non-radiative recombination processes intrinsic layer actual device find that effective generation rate experiment is proportional square applied because double-injection electron density. A simple model rates explains data. The was found be dependent, but independent.