Chapter 11 Irradiation-Induced Metastable Effects
作者： H. Schade
DOI: 10.1016/S0080-8784(08)62919-1
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摘要: Publisher Summary This chapter discusses irradiation-induced metastable effects. Metastable states changing the electrical and optical properties of a-Si:H can be generated by irradiation with visible light, x rays, electrons, ions or carrier injection. The generation defects relies on recombination energy electron–hole pairs. Annealing at temperatures above 160°C typically results in removal defects. Most probably, several types occur as a consequence bond breaking bonding changes. most prominent are dangling bonds; other may involve complex formation. Although hydrogen plays an important role, probably indirectly providing softening network, impurities such oxygen also cause Difficulties finding unique description stem from dependence defect formation original material properties. Furthermore, concurrent processes result compensating contributions to observed
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